Fishing – trapping – and vermin destroying
Patent
1996-05-01
1997-07-08
Niebling, John
Fishing, trapping, and vermin destroying
437 21, 437 32, 437 59, 148DIG9, 148DIG10, 257575, H01L 21265
Patent
active
056460554
ABSTRACT:
A bipolar transistor (10) includes a collector region (13), a base region (14) in the collector region (13), and an emitter region (20) in the base region (14). A portion (18) of an electrical conductor (16) is located over a base width (23) of the bipolar transistor (10). The emitter region (20) is self-aligned to the portion (18) of the electrical conductor (16) and is preferably diffused into the base region (14) in order to decrease the base width (23) without relying on extremely precise alignment between base region (14) and the portion (18) of the electrical conductor (16). The portion (18) of the electrical conductor (16) is used to deplete a portion of the base width (23) of the bipolar transistor (10).
REFERENCES:
patent: 3923553 (1975-12-01), Hayashi et al.
patent: 4050965 (1977-09-01), Ipri et al.
patent: 4546536 (1985-10-01), Anantha et al.
patent: 5045912 (1991-09-01), Ohki
patent: 5070381 (1991-12-01), Scott et al.
patent: 5100810 (1992-03-01), Yoshimi et al.
patent: 5147818 (1992-09-01), Hikida
patent: 5264719 (1993-11-01), Beasom
patent: 5298786 (1994-03-01), Shahidi et al.
patent: 5389561 (1995-02-01), Gomi
patent: 5416031 (1995-05-01), Miwa
patent: 5444004 (1995-08-01), Jang
patent: 5449627 (1995-09-01), Wang et al.
Chen George C.
Motorola Inc.
Niebling John
Pham Long
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