Metal working – Method of mechanical manufacture – Assembling or joining
Patent
1977-03-25
1978-03-28
Edlow, Martin R.
Metal working
Method of mechanical manufacture
Assembling or joining
357 4, 357 14, 357 30, 357 61, H01L 718, H01L 2714
Patent
active
040807231
ABSTRACT:
A method for making and using a group IV-VI photovoltaic semiconductor diode such that its capacitance is reduced substantially with respect to its capacitance if made and used according to prior art techniques. The capacitance reduction may be obtained without detrimental effect to the detectivity and noise levels of the diode. In the currently preferred form of the method, a thin film of p conductivity type semiconductor material, PbTe, is applied to (epitaxially grown on) a cleaved BaF.sub.2 substrate. A layer of Pb is deposited on the semiconductor material to form a diode having an n+ conductivity type region in the semiconductor material and a depletion region. When the PbTe semiconductor material is applied to the BaF.sub.2 substrate, its thickness is limited such that the depletion region extends to the boundary formed between the PbTe and BaF.sub.2 materials, either when the diode is formed or, preferably, when a backbias voltage, less than the diode reverse breakdown voltage, is applied across the p-n junction. The diode is particularly suitable for use as an infrared detector typically operated at 80.degree. K.
REFERENCES:
patent: 3647197 (1972-03-01), Holloway
patent: 3767984 (1973-10-01), Shinoda
patent: 3779801 (1973-12-01), Holloway et al.
patent: 3860945 (1975-01-01), Dawson
Holloway et al., Appl. Phys. Letts., vol. 30, No. 4, Feb. 15, 1977, pp. 210-212.
Holloway et al., Appl. Phys. Lett., vol. 19, No. 9, Nov. 1, 1971, pp. 318-319.
Andrews et al., Appl. Phys. Lett., vol. 26, No. 8, Apr. 15, 1975, pp. 285-287.
Holloway et al., Jour. of Appl. Phys., vol. 41, No. 8, July 1970, pp. 3543-3545.
Brown Robert W.
Edlow Martin R.
Ford Motor Company
Sadler Clifford L.
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