Coating processes – Direct application of electrical – magnetic – wave – or... – Ion plating or implantation
Patent
1998-05-26
2000-08-15
Padgett, Marianne
Coating processes
Direct application of electrical, magnetic, wave, or...
Ion plating or implantation
427534, 427567, 4271632, 216 24, 216 26, 216 67, 20419226, B05D 506, C23C 1458, C23C 1422, C23C 1414, C23F 100
Patent
active
061033189
ABSTRACT:
A method of forming a layer of silicon on a surface comprises the steps of depositing silicon on the surface by a physical deposition process such as electron beam evaporation and, during said deposition process, subjecting the forming film to ionic bombardment. The resultant silicon film has stresses which are considerably reduced compared to a film produced by an ordinary physical deposition process. This method is particularly well adapted to the formation of relatively thick silicon layers (.gtoreq.1 .mu.m) on a layer (or stack of layers) of silica, to serve as an etching mask in a subsequent deep etching of the silica by reactive ion etching.
REFERENCES:
patent: 4179312 (1979-12-01), Keller et al.
patent: 4256532 (1981-03-01), Magdo et al.
patent: 4365013 (1982-12-01), Ishioka et al.
patent: 4443488 (1984-04-01), Little et al.
patent: 4581113 (1986-04-01), Morimoto et al.
patent: 4619729 (1986-10-01), Johncock et al.
patent: 4634600 (1987-01-01), Shimizu et al.
patent: 4735677 (1988-04-01), Kawachi et al.
patent: 4735920 (1988-04-01), Stephani et al.
patent: 5015353 (1991-05-01), Hubler et al.
patent: 5089289 (1992-02-01), Ito
patent: 5098736 (1992-03-01), Fukuda
patent: 5391407 (1995-02-01), Dearnaley
patent: 5579424 (1996-11-01), Schneider
patent: 5593719 (1997-01-01), Dearnaley et al.
patent: 5744370 (1998-04-01), Nakamura
Trimble, et al. "Evaluation of polycrystalline silicon membranes on fused silica for x-ray lithography masks", J. of Vacuum Science and Technology--B 7 (1989) Nov./Dec. No. 6.
Derwent Patent Abstract of Japan, J03243771, Application No. 90JP-039337, filed Feb. 20, 1990 published Oct. 30, 1991 Nippon Sheet Glass, KK.
Derwent Patent Abstract of Japan, J04069603, Application No. 90JP-182445, filed Jul. 10, 1990 pub. Mar. 4, 1992 Copal KK.
Derwent Patent Abstract of Japan, J05299361, Application No. 92JP-101330, filed Apr. 21, 1992 pub. Nov. 12, 1993 Rimes KK.
Derwent Patent Abstract of Japan, J06077208, Application No. 92JP-226242, filed Aug. 25, 1992 pub. Mar. 18, 1994 Fujitsu Ltd.
Derwent Patent Abstract of Japan, J06312467, Application No. 93JP-094967, filed Mar. 31, 1993 pub. Nov. 8, 1994 Nippon Zeon KK.
Derwent Patent Abstract of Japan, J07159972, Application No. 93JP-305628, filed Dec. 6, 1993 published Jun. 23, 1995 Fujitsu Ltd.
Derwent Patent Abstracts--Abstract of basic patent EP-489659; Abstract of European equivalent, EP-489659; Abstract of US equivalent, US 5,278,861 no date given, but Jan. 11, 1994 issued.
Beguin Alain M J
Lehuede Philippe
Alden Philip G.
Corning Incorporated
Padgett Marianne
LandOfFree
Method for making an optical waveguide component using a low-str does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Method for making an optical waveguide component using a low-str, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method for making an optical waveguide component using a low-str will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-2004200