Method for making an ohmic contact for p-type group II-VI compou

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437105, 437129, 437965, 148DIG95, 148DIG64, H01L 21285, H01L 2120

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052139980

ABSTRACT:
A method for producing an ohmic contact to a p-type ZnSe semiconductor body in a molecular beam epitaxy chamber. Zinc, thermally cracked Se.sub.2 and nitrogen are injected into the chamber. A ZnSe contact layer is grown by heating the semiconductor body to a temperature less than 250.degree. C., but high enough to promote crystalline growth of the layer doped with nitrogen to a net acceptor concentration of at least 1.times.10.sup.18 cm.sup.-3.

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