Method for making an integrated injection logic structure includ

Details Method for making an integrated injection logic structure includ Method for making an integrated injection logic structure includ

1980-02-04

1982-04-06

Ozaki, G.

Metal working

Method of mechanical manufacture

Assembling or joining

148187, 148188, 357 59, 357 92, H01L 2122

Patent

active

043228828

ABSTRACT:
An integrated injection logic device is formed in a pocket of semiconductor material surrounded by oxide isolation, and separated from a substrate by an intervening region of opposite conductivity. The steps for forming the integrated injection logic device include depositing a first material which includes a first conductivity type impurity over a first portion of the epitaxial layer, treating the first material to cause at least some of the first conductivity type impurity to enter the epitaxial layer, and introducing an opposite conductivity type impurity into a second portion of the epitaxial layer. Typically, the first material is polycrystalline silicon doped with p conductivity type impurity.

REFERENCES:
patent: 3962717 (1976-06-01), O'Brien
patent: 3972754 (1976-08-01), Riseman
patent: 3993513 (1976-11-01), O'Brien
patent: 4157269 (1979-06-01), Ning et al.
patent: 4190466 (1980-02-01), Bhattacharyga et al.

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