Method for making an integrated circuit device with...

Active solid-state devices (e.g. – transistors – solid-state diode – Non-single crystal – or recrystallized – semiconductor... – Field effect device in non-single crystal – or...

Reexamination Certificate

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C257S093000, C257S126000, C257S127000, C257S374000

Reexamination Certificate

active

06989552

ABSTRACT:
A method for making an integrated circuit includes forming spaced-apart trenches on a surface of a single crystal silicon substrate, lining the trenches with a silicon oxide layer, forming a first polysilicon layer over the silicon oxide layer, forming a second polysilicon layer over the first polysilicon layer, and removing a thickness of the single crystal silicon substrate to expose tubs of single crystal silicon in the second polysilicon layer.

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patent: 6794708 (2004-09-01), Mori
Stanley Wolf, PhD., “Silicon Processing for the VLSI Era” ; vol. 2, Process Integration; pp. 67-69; Lattice Press, Sunset Beach, Ca., USA.

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