Active solid-state devices (e.g. – transistors – solid-state diode – Non-single crystal – or recrystallized – semiconductor... – Field effect device in non-single crystal – or...
Reexamination Certificate
2006-01-24
2006-01-24
Abraham, Fetsum (Department: 2826)
Active solid-state devices (e.g., transistors, solid-state diode
Non-single crystal, or recrystallized, semiconductor...
Field effect device in non-single crystal, or...
C257S093000, C257S126000, C257S127000, C257S374000
Reexamination Certificate
active
06989552
ABSTRACT:
A method for making an integrated circuit includes forming spaced-apart trenches on a surface of a single crystal silicon substrate, lining the trenches with a silicon oxide layer, forming a first polysilicon layer over the silicon oxide layer, forming a second polysilicon layer over the first polysilicon layer, and removing a thickness of the single crystal silicon substrate to expose tubs of single crystal silicon in the second polysilicon layer.
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Stanley Wolf, PhD., “Silicon Processing for the VLSI Era” ; vol. 2, Process Integration; pp. 67-69; Lattice Press, Sunset Beach, Ca., USA.
Goodwin Charles Arthur
Leffel Daniel David
Lewis William Randolph
Abraham Fetsum
Agere Systems Inc.
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