Radiant energy – Invisible radiant energy responsive electric signalling – Infrared responsive
Reexamination Certificate
2006-10-17
2006-10-17
Hannaher, Constantine (Department: 2884)
Radiant energy
Invisible radiant energy responsive electric signalling
Infrared responsive
Reexamination Certificate
active
07122797
ABSTRACT:
A detector including a base having a recess formed therein and a diaphragm generally extending across the recess. The detector further includes an infrared sensitive component or a piezoelectric or piezoresistive element located on, above or supported by the diaphragm. The diaphragm includes a material which is generally resistant to liquid chemical etchants and which has a thermal conductivity of less than about 0.005 Wcm−1K−1.
REFERENCES:
patent: 4959546 (1990-09-01), Bly
patent: 5056929 (1991-10-01), Watanabe et al.
patent: 5087312 (1992-02-01), Gerber et al.
patent: 5100479 (1992-03-01), Wise et al.
patent: 5879572 (1999-03-01), Folsom et al.
patent: 6046398 (2000-04-01), Foote et al.
patent: 6066574 (2000-05-01), You et al.
patent: 6080987 (2000-06-01), Belcher et al.
patent: 6305840 (2001-10-01), Kim et al.
patent: 6348650 (2002-02-01), Endo et al.
patent: 6380605 (2002-04-01), Verhaegen
patent: 6444487 (2002-09-01), Boggs et al.
patent: 6607935 (2003-08-01), Kwon
patent: 2002/0069909 (2002-06-01), Kubo
patent: 1072875 (2001-01-01), None
Hsieh, Ming-Chin et al., “Design and Fabrication of a Novel Crystal SiGeC Far Infrared Sensor with Wavelength 8-14 Micrometer,”IEEE Sensors Journal, vol. 2, No. 4, pp. 360-365 (Aug. 2002).
Taniguchi, Y. et al., “Pyroelectric Infrared Sensor Using PZT Thin Plate on Diaphragm as Sensitive Elements,”Electronics and Communications in Japan, Part 2, vol. 79, No. 7, pp. 86-96 (Jan. 1996).
Sánchez, S. et al., “A High TcSuperconductor Bolometer on a Silicon Nitride Membrane,”Journal of Microelectrochemical Systems, vol. 7, No. 1, pp. 62-67 (Mar. 1998).
Il Myun Choi et al., “A Silicon-Thermopile-Based Infrared Sensing Array for Use in Automated Manufacturing,”IEEE Transactions on Electron Devices, vol. ED-33, No. 1, pp. 72-79 (Jan. 1986).
Dannenberg, R. et al., “Electrical and Optical Properties of Mn1.56Co0.96Ni0.48O4,”SPIE, vol. 3379, pp. 158-165 (Apr. 1998).
Baliga, S. et al., “Sputtered film thermistor IR detectors,”SPIE, vol. 2225, pp. 72-78 (date unknown) Applicants admit the status of this publication as prior art for the limited purpose of examination of this application, but otherwise reserve the right to challenge the status of this publication as prior art. [1994].
Lahiji, G.R. et al., “A Batch-Fabricated Silicon Thermopile Infrared Detector,”IEEE Transactions on Electron Devices, vol. ED-29, No. 1, pp. 14-22 (Jan. 1982).
Völklein, F. et al., “High-sensitivity radiation thermopiles made of Bi-Sb-Te Films,”Sensors and Actuators, A, 29, pp. 87-91 (1991).
Mirmira, S.R. et al., “Review of the Thermal Conductivity of Thin Films”Journal of Thermophysics and Heat Transfer, vol. 12, No. 2, pp. 121-131 (Jun. 1998).
Shackelford, J.F. et al., Table 77. Thermodynamic Coefficients for Oxides, p. 281,Materials Science and Engineering Handbook, Third Edition, CRC Press (2000).
Lenggenhager, R. et al., “Thermoelectric infrared sensors in CMOS technology,”Sensors and Actuators, A, 37-38, pp. 216-220 (1993).
Muller, M. et al., “A Thermoelectric Infrared Radiation Sensor with Monolithically Integrated Amplifier Stage and Temperature Sensor,”Transducers '95, pp. 640-643.
Abowitz, G. et al., “The Electrical Properties of Bi:Sb:Se:Te Films,”Electrical Technology, pp. 426-430 (Jul. 1996).
Tezcan, D.S. et al., “A Low Cost Uncooled Infrared Microbolometer Focal Plane Array Using the CMOS N-Well Layer,”IEEE, pp. 566-569 (2001).
Tezcan, D.S. et al., “An Uncooled Microbolometer Infrared Focal Plane Array in Standard CMOS,”SPIE, vol. 4288, pp. 112-121 (2001).
Eminoglu, S. et al., “A CMOS N-Well Microbolometer FPA with Temperature Coefficient Enhancement Circuitry,”SPIE, vol. 4369, pp. 240-247 (2001).
“CYCLOTENE—Advanced Electronics Resing Processing Procedures for Dry-Etch CYCLOTENE Advanced Electronics Resins (Dry-Etch BCB),” pp. 1-8, by the Dow Chemical Company (1997).
Web page relating to “CYCLOTENE Dry-Etch Resins,” by The Dow Chemical Company (date of first publication unknown) Applicants admit the status of this publication as prior art for the limited purpose of examination of the application, but otherwise reserve the right to challenge the status of this publication as prior art.
Web page relating to “CYCLOTENE Planarization,” by The Dow Chemical Company (date of first publication unknown) Applicants admit the status of this publication as prior art for the limited purpose of examination of the application, but otherwise reserve the right to challenge the status of this publication as prior art.
Web page relating to “CYCLOTENE Plasma Etching,” by The Dow Chemical Company (date of first publication unknown) Applicants admit the status of this publication as prior art for the limited purpose of examination of the application, but otherwise reserve the right to challenge the status of this publication as prior art.
Guo Shuwen
Wiegele Thomas
Hannaher Constantine
Sensors Unlimited Inc.
Thompson Hine LLP
LandOfFree
Method for making an infrared detector and infrared detector does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Method for making an infrared detector and infrared detector, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method for making an infrared detector and infrared detector will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-3709841