Method for making an avalanche photodiode

Details Method for making an avalanche photodiode Method for making an avalanche photodiode

1985-08-30

1987-01-20

Hearn, Brian E.

Metal working

Method of mechanical manufacture

Assembling or joining

29580, 29574, 29576B, 148 15, 148DIG13, 357 30, 156626, H01L 21302

Patent

active

046371265

ABSTRACT:
An avalanche photodiode includes a region of second conductivity type extending a distance into a substrate and a region of first conductivity type extending a further distance into the substrate of first conductivity type with a P-N junction therebetween. The invention is a method for fabricating an avalanche photodiode having a specified breakdown voltage. The method includes the step of measuring the concentration of the first type conductivity modifiers and removing a portion of the surface of the substrate prior to forming the region of second conductivity type. This method provides control of the concentration of the first type conductivity modifiers at the P-N junction and thereby controls the breakdown voltage.

REFERENCES:
patent: 2989385 (1961-06-01), Gianola et al.
patent: 3228862 (1966-01-01), Vulcan
patent: 4383267 (1983-05-01), Webb
patent: 4463368 (1984-07-01), McIntyre
S. M. Sze, Physics of Semiconductor Devices, 2nd Edition, (John Wiley & Sons, Inc., 1981).

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