Semiconductor device manufacturing: process – Making device or circuit responsive to nonelectrical signal – Responsive to electromagnetic radiation
Reexamination Certificate
2011-01-04
2011-01-04
Le, Thao P. (Department: 2818)
Semiconductor device manufacturing: process
Making device or circuit responsive to nonelectrical signal
Responsive to electromagnetic radiation
C257SE31119
Reexamination Certificate
active
07863078
ABSTRACT:
A method is disclosed for making an anti-reflection film of a solar cell. The method includes the step of providing a laminate. The laminate includes a ceramic substrate, a titanium-based compound film, a p+type poly-silicon back surface field, a p−type poly-silicon light-soaking film and an n+type poly-silicon emitter. The laminate is passivated with SiCNO:Ar plasma in a plasma-enhanced vapor deposition device, thus filling the dangling bonds of the silicon atoms at the surface of the n+type poly-silicon emitter, the dangling bonds of the silicon grains at the grain boundaries of the p−type poly-silicon light-soaking film and the dangling bonds of the silicon atoms in the p+type poly-silicon back surface field. Finally, the n+type poly-silicon emitter is coated with an anti-reflection film of SiCN/SiO2.
REFERENCES:
patent: 6350945 (2002-02-01), Mizuno
patent: 6384317 (2002-05-01), Kerschaver et al.
patent: 6479316 (2002-11-01), Hanoka et al.
patent: 2010/0216274 (2010-08-01), Yang et al.
Chiang Chin-Chen
Huang Yu-Hsiang
Ku Chien-Te
Lan Shan-Ming
Ma Wei-Yang
Atomic Energy Council-Institute of Nuclear Energy Research
Jackson Demian K.
Jackson IPG PLLC
Le Thao P.
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