Method for making an alternation of layers of monocrystalline se

Details Method for making an alternation of layers of monocrystalline se Method for making an alternation of layers of monocrystalline se

1989-04-04

1991-03-12

Chaudhuri, Olik

Fishing, trapping, and vermin destroying

148DIG26, 148DIG50, 156613, 437 69, 437 80, 437 81, 437 83, 437 99, 437976, H01L 2120

Patent

active

049993143

ABSTRACT:
In a method for the fabrication of a layer of a monocrystalline semiconducting layer on a layer of insulating material, an epitaxial growth is achieved in a cavity closed by layers of dielectric material, using a seed of monocrystalline semiconducting material of a substrate. The growth takes place first of all, vertically, perpendicularly to the seed, and then horizontally in the plane of the cavity. This method thus enables a three-dimensional integration of semiconductor components.

REFERENCES:
patent: 4131984 (1979-01-01), Kaplow et al.
patent: 4789643 (1988-12-01), Kajikawa
patent: 4824794 (1989-04-01), Tabata et al.
patent: 4837182 (1989-06-01), Bozler et al.
Journal of the Electrochemical Society, vol. 129, No. 10, pp. 2303-2306; D. D. Rathman, et al.
Journal of the Electrochemical Society, vol. 132, No. 10, Oct. 1985, pp. 2445-2453; H. Asai, et al.

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