Method for making an all-silicon capacitive pressure sensor

Details Method for making an all-silicon capacitive pressure sensor Method for making an all-silicon capacitive pressure sensor

1996-09-03

1998-01-13

Chilcot, Richard

Metal working

Electric condenser making

Solid dielectric type

H01G 700

Patent

active

057065659

ABSTRACT:
An all-silicon monolithic capacitive absolute pressure-sensing device and method for making the same. The device employs a single-crystal silicon diaphragm that serves at a flexible capacitor plate of a variable capacitor. The diaphragm is bonded to a single-crystal silicon wafer to overlie a cavity etched into the wafer. A fixed capacitor plate of the variable capacitor is formed by a heavily-doped region at the bottom of the cavity. A thin dielectric layer is grown on the fixed capacitor plate to complete the capacitor. The cavity has a minimal depth such that the fixed capacitor plate provides overpressure protection for the diaphragm. At least a portion of the operating range of the pressure sensor occurs while the diaphragm is contacting the doped region. As a result, the capacitive output signal of the pressure sensor is produced by changes in contact area between the diaphragm and a thin dielectric situated on the doped region in response to pressure applied to the diaphragm.

REFERENCES:
patent: 4530029 (1985-07-01), Beristain
patent: 4578735 (1986-03-01), Knecht et al.
patent: 4949581 (1990-08-01), Rud, Jr.
patent: 5245504 (1993-09-01), Bullis et al.
patent: 5344423 (1994-09-01), Fung et al.
patent: 5490034 (1996-02-01), Zavracky et al.
patent: 5528452 (1996-06-01), Ko

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