Method for making a wire nanostructure in a semiconductor film

Details Method for making a wire nanostructure in a semiconductor film Method for making a wire nanostructure in a semiconductor film

2007-05-15

2007-05-15

Chowdhury, Tarifur (Department: 2112)

Active solid-state devices (e.g., transistors, solid-state diode

Thin active physical layer which is

C977S762000

Reexamination Certificate

active

10529937

ABSTRACT:
This invention relates to a process for manufacturing nanowire structures, the process comprising the following steps:manufacture of a thin semiconductor film (1) extending between a first terminal (4) and a second terminal (5), andpassage of a current between the first and the second terminals so as to form at least one continuous overthickness (R1, R2, R3) in the thin semiconductor film by migration of a fraction of the semiconductor material, under the action of the current, the continuous overthickness being formed along the direction of the current that passes through the film.

REFERENCES:
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patent: 0 557 590 (1993-09-01), None
Ogawa, Tomoya, et al.; “Real-Time Observation of Electron-Beam Induced Mass Transport in Strained InGaAs/AIGaAs Layers on GaAs (100) and (311)B Substrates,” Jpn. J. Appl. Phys., vol. 38; Feb. 1999; pp. 1040-1043.
Yagi, Katsumichi, et al.; “Step bunching, step wandering and faceting: self-organization at Si surfaces,” Surface Science Reports 43 (2001); pp. 45-126.
T. Sameshima, et al., “Rapid crystallization of silicon films using electrical-current-induced joule heating,” J. Appl Phys.; vol. 89, No. 10; May 15, 2001; pp. 5362-5367.
International Search Report; Aug. 12, 2004; 2 pp.

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