Method for making a thin film transistor using a concentric inle

Details Method for making a thin film transistor using a concentric inle Method for making a thin film transistor using a concentric inle

1988-11-01

1989-12-05

Hearn, Brian E.

Fishing, trapping, and vermin destroying

148DIG1, 148DIG57, 148DIG169, 357 6, 357 237, 437 62, 437101, 437914, H01L 21265, H01L 2120

Patent

active

048852589

ABSTRACT:
There is provided an improved thin-film transistor of which a principal semiconducting layer comprises a layer composed of an amorphous material prepared by (a) introducing (i) a gaseous substance containing atoms capable of becoming constituents for said layer into a film forming chamber having a substrate for thin-film transistor through a transporting conduit for the gaseous substance and (ii) a gaseous halogen series substance having a property to oxidize the gaseous substance into the film forming chamber through a transporting conduit for the gaseous halogen series oxidizing agent, (b) chemically reacting the gaseous substance and the gaseous halogen series agent in the film forming chamber in the absence of a plasma to generate plural kinds of precursors containing exited precursors and (c) forming said layer on the substrate with utilizing at least one kind of those precursors as a supplier.

REFERENCES:
patent: Re31708 (1984-10-01), Gordon
patent: 2552626 (1951-05-01), Fisher et al.
patent: 3083550 (1963-04-01), Auerbach
patent: 3188230 (1965-06-01), Bakish et al.
patent: 3203827 (1965-08-01), Hill
patent: 3218204 (1965-11-01), Ruehrwein
patent: 3224912 (1965-12-01), Ruehrwein
patent: 3306768 (1967-02-01), Peterson
patent: 3466191 (1969-09-01), Stinchfield et al.
patent: 3506556 (1970-04-01), Gillery et al.
patent: 3655429 (1972-04-01), Deklerk
patent: 3664866 (1972-05-01), Manasevit
patent: 3850679 (1974-11-01), Sopko et al.
patent: 3870558 (1975-03-01), Shimizu et al.
patent: 3922703 (1975-11-01), Pankove
patent: 4058430 (1977-11-01), Suntola et al.
patent: 4096822 (1978-06-01), Yamawaki et al.
patent: 4146657 (1979-03-01), Gordon
patent: 4180596 (1979-12-01), Crowder et al.
patent: 4206252 (1980-06-01), Gordon
patent: 4282267 (1981-08-01), Kuyel
patent: 4328261 (1982-05-01), Heinecke et al.
patent: 4359490 (1982-11-01), Lehrer
patent: 4416217 (1983-11-01), Nakamura et al.
patent: 4422407 (1983-12-01), Bessot et al.
patent: 4425572 (1984-01-01), Takafugi et al.
patent: 4502204 (1985-03-01), Togashi et al.
patent: 4515107 (1985-05-01), Fournier et al.
patent: 4526809 (1985-07-01), Hall et al.
patent: 4529679 (1985-07-01), Ogawa et al.
patent: 4595601 (1986-06-01), Horioka et al.
patent: 4618873 (1986-10-01), Sasano et al.
patent: 4650539 (1987-03-01), Irvine et al.
patent: 4668969 (1987-05-01), Yamazaki
patent: 4683146 (1987-07-01), Hirai et al.
patent: 4686553 (1987-08-01), Possin
patent: 4751192 (1988-06-01), Hirooka et al.
patent: 4771015 (1988-09-01), Kanai et al.
patent: 4772570 (1988-09-01), Kanai et al.
patent: 4798809 (1989-01-01), Hirooka et al.

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