Method for making a thin film transistor

Details Method for making a thin film transistor Method for making a thin film transistor

1986-08-29

1988-05-24

Hearn, Brian E.

Fishing, trapping, and vermin destroying

437101, 437187, 357 2, 357 4, 357 237, 148DIG3, 148DIG1, H01L 21225, H01L 21385, H01L 2144, H01L 2148

Patent

active

047466286

ABSTRACT:
A thin film transistor (TFT) of a self-aligned structure, wherein a pair of a source electrode and a drain electrode are formed in alignment with a gate electrode and in contact with low resistance areas formed at both side portions of a semiconductor layer deposited on an insulating substrate. The low resistance areas are formed by the diffusion of metal atoms through heat-treatment.

REFERENCES:
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patent: 4332076 (1982-06-01), Solo de Zaldivar
patent: 4343081 (1982-08-01), Morin et al.
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patent: 4389768 (1983-06-01), Fowler et al.
patent: 4398340 (1983-08-01), Brown
patent: 4425572 (1984-01-01), Takafuji et al.
J. Electrochem. Soc. Solid State Science, Sep. 1971, vol. 118, No. 9, pp. 1463-1468. "High Temperature Annealing of Oxidized Silicon Surface", by F. Montillo et al.

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