Method for making a thin film transistor

Details Method for making a thin film transistor Method for making a thin film transistor

1994-08-09

1995-10-17

Hearn, Brian E.

Fishing, trapping, and vermin destroying

437 43, 437 46, 437 48, 437 52, H01L 29786

Patent

active

054590884

ABSTRACT:
A method for making semiconductor thin film transistors (TFTs) having a bottom gate such that the gate electrode is formed of a polysilicon layer with a rugged surface, thereby providing a TFT which has a high on/off current ratio. According to the present invention, a thin film transistor may have a substrate; a gate electrode having a rugged surface formed on the substrate; a gate insulating layer formed on the gate electrode and the substrate; a semiconductor layer formed over the gate insulation layer; impurity regions formed at opposite sides of the gate electrode in the semiconductor layer. A method for making a thin film transistor according to present invention may include the steps of: forming a gate electrode having a rugged surface on a substrate; forming an insulating layer and a semiconductor layer on the substrate and the gate electrode; forming impurity regions at opposite sides of the gate electrode in the semiconductor layer.

REFERENCES:
patent: 4735919 (1988-04-01), Faraone
patent: 4774202 (1988-09-01), Pan et al.
patent: 5149676 (1992-09-01), Kim et al.
patent: 5300446 (1994-04-01), Fujioka
16Mbit SRAM Cell Technologies for 2.0V Operation; H. Ohkubo, et al.; 1991 IEEE; pp. 481-484IDEM.

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