Method for making a thin film resistor

Details Method for making a thin film resistor Method for making a thin film resistor

2011-04-05

2011-04-05

Phan, Thiem (Department: 3729)

Metal working

Method of mechanical manufacture

Electrical device making

C029S619000, C029S851000, C029S890010, C347S062000, C347S063000

Reexamination Certificate

active

07918015

ABSTRACT:
A process for making a fluid ejector head for a micro-fluid ejection device. In one embodiment, the process comprises depositing a thin film resistive layer on a substrate to provide a plurality of thin film heaters. The thin film resistive layer comprises a tantalum-aluminum-nitride material consisting essentially of AlN, TaN, and TaAl alloys, and containing from about 30 to about 70 atomic % tantalum, from about 10 to about 40 atomic % aluminum and from about 5 to about 30 atomic % nitrogen.

REFERENCES:
patent: 5892281 (1999-04-01), Akram et al.
patent: 6336713 (2002-01-01), Regan et al.

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