Method for making a thin-film poly-crystalline silicon solar...

Semiconductor device manufacturing: process – Making device or circuit responsive to nonelectrical signal – Responsive to electromagnetic radiation

Reexamination Certificate

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Reexamination Certificate

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07666706

ABSTRACT:
A method is disclosed for making a thin-film poly-crystalline silicon solar cell. In the method, there is provided an ITO-glass substrate by coating a glass substrate with a transparent and conductive ITO film. An amorphous silicon film is grown on the ITO-glass substrate. An aluminum film is grown on the amorphous silicon film. The aluminum film and the amorphous silicon film are annealed and therefore converted and interchanged into an aluminum-silicon alloy film and a p+poly-crystalline silicon film, respectively. In a low-temperature plasma-based deposition process, a p−poly-crystalline silicon film is coated on the p+poly-crystalline silicon film, and an n+poly-crystalline silicon film is coated on the p−poly-crystalline silicon film. An ohmic contact is provided on the transparent and conductive ITO film. Other ohmic contacts are provided on the n+poly-crystalline silicon film. An anti-reflection film is coated on the n+poly-crystalline silicon film.

REFERENCES:
patent: 2008/0264477 (2008-10-01), Moslehi
Nast et al., Polycrystalline Silicon Thin Films on Glass by Aluminum-Induced Crystallization, IEEE Transactions on Electron Devices, vol. 46, No. 10, Oct. 1999, pp. 2062-2068.
Gall et al., Polycrystalline Silicon on Glass by Aluminum-Induced Crystallization IEEE Photovoltaic Specialists Conference, Proceedings of the Twenty-Ninth, 2002, pp. 1202-1205.
Aberle et al., Polycrystalline Silicon on Glass Thin-film Solar Cell Research at UNSW Using the Seed Layer Concept, 3rdWorld Conference on Photovoltaic Energy COnversion, May 2003, pp. 1194-1197.

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