Method for making a superconducting field-effect transistor with

Details Method for making a superconducting field-effect transistor with Method for making a superconducting field-effect transistor with

1991-07-16

1994-01-11

Wilczewski, Mary

Superconductor technology: apparatus, material, process

High temperature , per se

Having tc greater than or equal to 150 k

505701, 505706, 437 40, 437 42, H01L 21336

Patent

active

052781364

ABSTRACT:
This field-effect transistor comprises a conductive substrate (2) serving as the gate electrode, an insulating barrier layer (3), and a superconducting channel layer (1) on top of the barrier layer (3). The superconductor layer (1) carries a pair of mutually spaced electrodes (4, 5) forming source and drain, respectively. The substrate is provided with an appropriate gate contact (6).
The substrate (2) consists of a material belonging to the same crystallographic family as the barrier layer (3). In a preferred embodiment, the substrate (2) is niobium-doped strontium titanate, the barrier layer (3) is undoped strontium titanate, and the superconductor (1) is a thin film of a material having a lattice constant at least approximately similar to the one of the materials of the substrate (2) and barrier (3) layers. A preferred material of this type is YBa.sub.2 Cu.sub.3 O.sub.7-.delta., where 0 .cent..delta..ltoreq.0.5.
While the preferred embodiment of the present invention has been herein described, numerous modifications, changes and improvements will occur to those skilled in the art without departing from the spirit and scope of the present invention.

REFERENCES:
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patent: 5075283 (1991-12-01), De
patent: 5084438 (1992-01-01), Matsubara et al.
patent: 5126315 (1992-06-01), Nishino et al.
patent: 5128316 (1992-07-01), Agostinelli et al.
patent: 5130294 (1992-07-01), Char
patent: 5132282 (1992-07-01), Newman et al.
patent: 5173474 (1992-12-01), Connell et al.

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