Semiconductor device manufacturing: process – Having superconductive component
Patent
1995-11-20
1998-12-08
Nguyen, Tuan H.
Semiconductor device manufacturing: process
Having superconductive component
438198, 438216, 427 62, 505191, 505193, H01L 2100
Patent
active
058468463
ABSTRACT:
Disclosed is a method for making a superconducting field-effect device with a grain boundary channel, the method comprising the steps of depositing a first superconducting thin film on a substrate; patterning the first superconducting thin film to form a patterned superconducting thin film having an opening; depositing a template layer thereon; selectively etching back the template layer to form a patterned template layer; growing a second superconducting thin film to form a grain boundary therebetween; depositing an insulating layer on the second superconducting thin film to protect the second superconducting thin film from degrading in property in the air; selectively etching back the insulating layer to form a patterned insulating layer; forming a gate insulating layer on the patterned insulating layer; and coating metal electrodes thereon, source/drain being formed respectively on the etched portions, and a gate electrode being formed on the deposited portion of the gate insulating layer directly above the grain boundary. In the superconducting FET manufactured thus, since a gate electrode is formed directly above a grain boundary, current flowing between source and drain can be controlled by a voltage applied through an gate insulating layer. Also, since the grain boundary serving as a channel can be formed in a cheaper oxide crystal substrate by variation in a growing temperature of thin film without using an expensive by-crystal substrate, a high-temperature superconducting FET can be economically fabricated.
REFERENCES:
patent: 5057485 (1991-10-01), Nishino et al.
patent: 5116072 (1992-05-01), Inada et al.
patent: 5236896 (1993-08-01), Nakamura et al.
patent: 5273136 (1993-12-01), Bednorz et al.
patent: 5274249 (1993-12-01), Xi et al.
patent: 5278136 (1994-01-01), Bednorz et al.
patent: 5322526 (1994-06-01), Nakamura et al.
patent: 5324714 (1994-06-01), Inam et al.
patent: 5358928 (1994-10-01), Ginley et al.
patent: 5366953 (1994-11-01), Char et al.
patent: 5422336 (1995-06-01), Tsuda et al.
patent: 5525582 (1996-06-01), Tanaka et al.
patent: 5637555 (1997-06-01), Nakamura et al.
Applied Phys. Letter 62; Feb. 3, 1993; pp. 630-632; Large Electric Field Effects etc.; Strobel, Bednorz and Gerber.
IEEE Transactions on Applied Superconductivity, vol. 3, No. 1, Mar. 1993; Field Effect Transistor Based on A Bi-Crystal Grain Boundary Josephson Junction; Ivanov, Stepantsov, Tzalenchuk, Shekhter and Claeson.
Applied Phys. Letter 59; Dec. 23, 1991; Electric Field Effect in high Tc Superconducting ultrathin etc.; Li, Kwon, Bhattacharya, Findikoglu and Venkatesan; and Applied Phys. Letter 63; Aug. 2, 1993; Nakajima, Yokota, et al.
Suh Jeong-Dae
Sung Gun-Yong
Electronics and Telecommunications Research Institute
Nguyen Tuan H.
LandOfFree
Method for making a superconducting field-effect device with gra does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Method for making a superconducting field-effect device with gra, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method for making a superconducting field-effect device with gra will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-176735