Semiconductor device manufacturing: process – Bonding of plural semiconductor substrates – Thinning of semiconductor substrate
Reexamination Certificate
2005-12-13
2005-12-13
Mulpuri, Savitri (Department: 2812)
Semiconductor device manufacturing: process
Bonding of plural semiconductor substrates
Thinning of semiconductor substrate
C438S107000
Reexamination Certificate
active
06974759
ABSTRACT:
The invention relates to a process for manufacturing a stacked structure comprising at least one thin layer bonding to a target substrate, comprising the following steps:a) formation of a thin layer starting from an initial substrate, the thin layer having a free face called the first contact face,b) putting the first contact face into bonding contact with a face of an intermediate support, the structure obtained being compatible with later thinning of the initial substrate,c) thinning of the said initial substrate to expose a free face of the thin layer called the second contact face and opposite the first contact face,d) puffing a face of the target substrate into bonding contact with at least part of the second contact face, the structure obtained being compatible with later removal of all or some of the intermediate support,e) removal of at least part of the intermediate support in order to obtain the said stacked structure.
REFERENCES:
patent: 5391257 (1995-02-01), Sullivan et al.
patent: 6074892 (2000-06-01), Bowers et al.
patent: 6150239 (2000-11-01), Goesele et al.
patent: 6225192 (2001-05-01), Aspar et al.
patent: 6326279 (2001-12-01), Kakizaki et al.
patent: 6355541 (2002-03-01), Holland et al.
patent: 6391799 (2002-05-01), Di Cioccio
patent: 6809009 (2004-10-01), Aspar et al.
patent: 2002/0094668 (2002-07-01), Aspar et al.
patent: 2004/0110316 (2004-06-01), Ogihara et al.
patent: 2781082 (1998-10-01), None
patent: WO0019499 (2000-06-01), None
Aspar Bernard
Jalaguier Eric
Letertre Fabrice
Moriceau Hubert
Commissariat a l''Energie Atomique
Hayes & Soloway P.C.
Mulpuri Savitri
LandOfFree
Method for making a stacked comprising a thin film adhering... does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Method for making a stacked comprising a thin film adhering..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method for making a stacked comprising a thin film adhering... will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-3477680