Method for making a SOI semiconductor substrate with thin...

Details Method for making a SOI semiconductor substrate with thin... Method for making a SOI semiconductor substrate with thin...

2006-04-18

2006-04-18

Pham, Hoai (Department: 2814)

Semiconductor device manufacturing: process

Gettering of substrate

C438S480000

Reexamination Certificate

active

07029991

ABSTRACT:
The invention concerns a method comprising: 1) a first phase including steps which consist in forming in the upper part of a first initial semiconductor substrate a first layer of insulating material above a sectional plane of said first substrate, contacting the first layer of insulating material with the insulating upper part of a second initial substrate, so as to form a single layer of insulating material, a break at the sectional plane, so as to obtain an intermediate semiconductor substrate on the single insulating material layer; then, 2) in a second phase which consists in forming in the intermediate semiconductor substrate an additional insulating material layer adjacent to the single insulating material and topped with an upper layer of a final semiconductor substrate.

REFERENCES:
patent: 5589407 (1996-12-01), Meyyappan et al.

Affiliated with

Also associated with

Rating

Method for making a SOI semiconductor substrate with thin... does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Method for making a SOI semiconductor substrate with thin..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method for making a SOI semiconductor substrate with thin... will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-3607368