Semiconductor device manufacturing: process – Bonding of plural semiconductor substrates
Reissue Patent
2000-06-08
2010-10-19
Garber, Charles D. (Department: 2812)
Semiconductor device manufacturing: process
Bonding of plural semiconductor substrates
C438S457000, C438S458000, C438S464000
Reissue Patent
active
RE041841
ABSTRACT:
A method for making a silicon substrate having a buried thin silicon oxide film is described. The method consists of: a) producing a first element having a first silicon body whereof the main surface is coated, in succession, with a buffer layer of germanium, or of an alloy of germanium and silicon, and with a thin silicon film; b) producing a second element, having a silicon body whereof a main surface is coated with a thin silicon oxide film; c) linking the first element with the second element such that the thin silicon film of the first element is in contact with the thin silicon oxide film of the second element; and d) eliminating the buffer layer to recuperate the silicon substrate having a buried thin silicon oxide film and a reusable silicon substrate. The method may be useful in making microelectronic devices such as CMOS and MOSFET devices.
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French Search Report, French Application No. 9907496; Prepared Feb. 29, 2000.
Jurczak Malgorzata
Skotnicki Thomas
Garber Charles D.
Nikmanesh Seahvosh J
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