Method for making a silicon quantum dot fluorescent lamp

Electric lamp or space discharge component or device manufacturi – Process – With assembly or disassembly

Reexamination Certificate

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Details

C445S024000, C445S022000, C445S051000, C427S064000, C427S067000

Reexamination Certificate

active

07896723

ABSTRACT:
A silicon quantum dot fluorescent lamp is made via providing a high voltage source between a cathode assembly and an anode assembly. The cathode assembly is made by providing a first substrate, coating a buffer layer on the first substrate, coating a catalytic layer on the buffer layer and providing a plurality of nanometer discharging elements on the catalytic layer. The anode assembly is made via providing a second substrate, coating a silicon quantum dot fluorescent film on the second substrate with and coating a metal film on the silicon quantum dot fluorescent film.

REFERENCES:
patent: 5442254 (1995-08-01), Jaskie
patent: 5455489 (1995-10-01), Bhargava
patent: 5882779 (1999-03-01), Lawandy
patent: 7132783 (2006-11-01), Kambe et al.
patent: 7569984 (2009-08-01), Yang et al.
patent: 2010/0216266 (2010-08-01), Yang et al.

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