Method for making a silicon field emission emitter

Details Method for making a silicon field emission emitter Method for making a silicon field emission emitter

1993-12-08

1996-06-18

Breneman, R. Bruce

Electric lamp or space discharge component or device manufacturi

Process

Electrode making

437228, H01L 2146, H01J 912

Patent

active

055272002

ABSTRACT:
There is disclosed a silicon field emission emitter and a method for making a silicon field emission emitter which has a good electronic characteristic and a simplified making process. The silicon field emission emitter in accordance with the embodiment of the present invention includes a silicon substrate of high density, an insulating layer on the silicon substrate of high density, a cavity formed in the insulating layer, an emitter formed with the silicon substrate of high density in a body in the cavity, and a gate electrode formed on the insulating layer. The insulating layer is made of the thermal oxide film having the thickness of 4000 angstroms and the gate electrode coats the emitter tip.

REFERENCES:
patent: 4095133 (1978-06-01), Hoeberechis
patent: 5266530 (1993-11-01), Bagley et al.
patent: 5312514 (1994-05-01), Kumar
patent: 5389026 (1995-02-01), Fukata et al.
patent: 5401676 (1995-03-01), Lee
patent: 5420054 (1995-05-01), Choi et al.
Wolf, Stanley, `Si Proc. For The VLSI ERA`, vol. II, Lattice Press; Sunset Beach, CA; p. 314.

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