Method for making a silicon field emission device

Details Method for making a silicon field emission device Method for making a silicon field emission device

1993-08-30

1995-03-28

Hearn, Brian E.

Fishing, trapping, and vermin destroying

437 89, 313311, 445 49, 445 50, H01L 2144

Patent

active

054016762

ABSTRACT:
A method is disclosed for making a silicon emission emitter for use as electron sources for various display elements, light sources, high-speed switching devices, and micro-sensors. The method relates to the formation of a tip portion of an emitter and an electron range by using a silicide material having a high melting point and a low work function. The emitter tip and electron range formed by the silicide material is a predetermined distance away from an oxide film, therefore, the emission characteristic of the emitter is efficiently strengthened, and the leakage current is, thereby, reduced due to the prevention of the metallic contamination to the insulating layers.

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