Fishing – trapping – and vermin destroying
Patent
1991-04-03
1993-03-30
Hearn, Brian E.
Fishing, trapping, and vermin destroying
437192, 437193, 437200, H01L 21265
Patent
active
051983729
ABSTRACT:
Disclosed is a process for forming a bipolar transistor at the face (22) of a semiconductor layer. A refractory metal layer (34) is deposited on the face (22) to cover a base area (38) thereof. A dopant (40) is implanted through the metal layer (34) within the base area (38) to penetrate the face (22). The metal layer (34) is then removed from the face within an emitter area (48) contained within the base area (38). A dopant is then diffused into the face within the emitter area (48). Finally, the dopants are annealed to form a shallow base region (66) that spaces an emitter region (64) from a collector region (12, 14). The process of the invention can form a high-concentration emitter/base junction only 400 Angstroms from the surface of the semiconductor layer.
REFERENCES:
patent: 3604986 (1971-09-01), Lepselter
patent: 3775192 (1973-11-01), Beale
patent: 4495512 (1985-01-01), Isaac et al.
patent: 4683645 (1987-08-01), Naguib et al.
patent: 4774204 (1988-09-01), Havemann
patent: 4788160 (1988-11-01), Havemann et al.
patent: 4816423 (1989-03-01), Havemann
patent: 4902640 (1990-02-01), Sachitano et al.
Donaldson Richard L.
Hearn Brian E.
Kesterson James C.
Nguyen Tuan
Stoltz Richard A.
LandOfFree
Method for making a shallow junction bipolar transistor and tran does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Method for making a shallow junction bipolar transistor and tran, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method for making a shallow junction bipolar transistor and tran will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-1280691