Semiconductor device manufacturing: process – Forming bipolar transistor by formation or alteration of... – On insulating substrate or layer
Reexamination Certificate
2011-04-19
2011-04-19
Nhu, David (Department: 2895)
Semiconductor device manufacturing: process
Forming bipolar transistor by formation or alteration of...
On insulating substrate or layer
C438S417000, C438S933000, C257SE21320, C257SE21051, C257SE21058, C257SE21115
Reexamination Certificate
active
07927956
ABSTRACT:
A semiconductor substrate having a silicon layer is provided. In one embodiment, the substrate is a silicon-on-insulator (SOI) substrate having an oxide layer underlying the silicon layer. An amorphous or polycrystalline silicon germanium layer is formed overlying the silicon layer. Alternatively, germanium is implanted into a top portion of the silicon layer to form an amorphous silicon germanium layer. The silicon germanium layer is then oxidized to convert the silicon germanium layer into a silicon dioxide layer and to convert at least a portion of the silicon layer into germanium-rich silicon. The silicon dioxide layer is then removed prior to forming transistors using the germanium-rich silicon. In one embodiment, the germanium-rich silicon is selectively formed using a patterned masking layer over the silicon layer and under the silicon germanium layer. Alternatively, isolation regions may be used to define local regions of the substrate in which the germanium-rich silicon is formed.
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Barr Alexander L.
Orlowski Marius K.
Sadaka Mariam G.
White Ted R.
Chiu Joanna G.
Clingan, Jr. James L.
Freescale Semiconductor Inc.
Nhu David
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