Semiconductor device manufacturing: process – Making device or circuit emissive of nonelectrical signal
Reexamination Certificate
2007-01-02
2007-01-02
Dang, Phuc T. (Department: 2818)
Semiconductor device manufacturing: process
Making device or circuit emissive of nonelectrical signal
C438S030000, C438S907000
Reexamination Certificate
active
11062490
ABSTRACT:
A method for making a semiconductor light emitting device comprises the steps of: (a) forming a plurality of buttresses on a first supporting substrate such that the buttresses are separated by a plurality of intercommunicated spaces thereamong; (b) forming a base layer on top end portions of the buttresses in such a manner that the top end portions of the buttresses are enclosed in the base layer; (c) forming a multi-layered light-emitting structure on the base layer; (d) attaching a second supporting substrate to the light-emitting structure; and (e) separating the first supporting substrate from the light-emitting structure by destroying the buttresses.
REFERENCES:
patent: 2002/0032531 (2002-03-01), Mansky et al.
Chen Cheng-Chuan
Lai Kun-Yu
Dang Phuc T.
Foley & Lardner LLP
Genesis Photonics Inc.
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