Method for making a semiconductor laser by cleaving a cantilever

Details Method for making a semiconductor laser by cleaving a cantilever Method for making a semiconductor laser by cleaving a cantilever

1986-10-10

1988-09-06

Hearn, Brian E.

Fishing, trapping, and vermin destroying

437104, 437107, 437126, 437226, 437 90, 156610, 156614, 148DIG26, 148DIG50, 148DIG95, 372 48, H01L 21208, B01J 1700

Patent

active

047693428

ABSTRACT:
A semiconductor laser device comprises a substrate (7) formed of p type GaAs, a laser diode portion (10) capable of laser oscillation and a monitor photodiode portion (11) capable of photoelectric conversion formed on substrate (7). The laser diode portion (10) and the monitor photodiode portion (11) are both formed of an epitaxial separating layer (6) of p type AlAs, an epitaxial layer group (23) mainly formed of a material of AlGaAs system and an epitaxial window layer (9) formed on a cleavage plane of this epitaxial layer group (23). The cleavage plane of the epitaxial window layer (9) on the side of the laser diode portion (10) constitutes a laser resonator plane (16) for laser light output of said laser diode portion (10) while the cleavage plane of the epitaxial window layer (9) on the monitor photodiode portion (11) constitutes a light receiving plane (17) for receiving the laser light outputted from the laser resonator plane (16).

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"Be-Implanted GaAs/GaAlAs Double Heterostructure Strip Geometry Lasers Grown by Metalorganic Chemical Vapor Deposition", H. Shtrikman et al., J. Appl. Phys., 56 (5), Sep. 1, 1984, pp. 1298-1300.

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