Semiconductor device manufacturing: process – Making conductivity modulation device
Reexamination Certificate
2007-09-04
2007-09-04
Mulpuri, Savitri (Department: 2812)
Semiconductor device manufacturing: process
Making conductivity modulation device
C438S479000, C438S162000, C257SE21633
Reexamination Certificate
active
11042272
ABSTRACT:
A method for making a semiconductor device may include providing a substrate, and forming at least one MOSFET adjacent the substrate by forming a superlattice including a plurality of stacked groups of layers and a semiconductor cap layer on an uppermost group of layers. Each group of layers of the superlattice may include a plurality of stacked base semiconductor monolayers defining a base semiconductor portion and at least one non-semiconductor monolayer constrained within a crystal lattice of adjacent base semiconductor portions. The method may further include forming source, drain, and gate regions defining a channel through at least a portion of the semiconductor cap layer.
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Dukovski Ilija
Hytha Marek
Kreps Scott A.
Mears Robert J.
Sow Fook Yiptong Jean Augustin Chan
Allen Dyer Doppelt Milbrath & Gilchrist, P.A.
Mulpuri Savitri
RJ Mears, LLC
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