Active solid-state devices (e.g. – transistors – solid-state diode – Combined with electrical contact or lead – Of specified material other than unalloyed aluminum
Reexamination Certificate
2002-06-25
2003-02-18
Elms, Richard (Department: 2824)
Active solid-state devices (e.g., transistors, solid-state diode
Combined with electrical contact or lead
Of specified material other than unalloyed aluminum
C257S345000, C257S749000, C257S750000, C257S753000, C257S758000, C257S762000
Reexamination Certificate
active
06522000
ABSTRACT:
FIELD OF THE INVENTION
The present invention relates to semiconductor devices that include copper conductive layers.
BACKGROUND OF THE INVENTION
Semiconductor devices include metal layers that are insulated from each other by dielectric layers. When copper is used to make those metal layers, it may be desirable to form an etch stop layer or layers, e.g., a layer comprising silicon nitride or silicon carbide, on such copper containing layers. Unfortunately, current processes for applying such an etch stop layer to copper containing layers may yield a device with marginal adhesion between those layers, which may degrade electromigration performance.
Accordingly, there is a need for an improved method for making a semiconductor device that includes copper conductive layers. There is a need for such a process that improves adhesion between copper conductive layers and an etch stop layer that is formed on them. The present invention provides such a process.
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Blakely , Sokoloff, Taylor & Zafman LLP
Elms Richard
Menz Douglas
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