Method for making a semiconductor device having an isolated laye

Details Method for making a semiconductor device having an isolated laye Method for making a semiconductor device having an isolated laye

1993-11-17

1994-10-04

Thomas, Tom

Fishing, trapping, and vermin destroying

437 69, 437 72, 437 73, 437947, 148DIG117, H01L 2176

Patent

active

053526260

ABSTRACT:
Steps or grooves are formed in a surface of a semiconductor substrate of a semiconductor device having a plurality of semiconductor elements, and an isolation Layer is formed on regions that include the steps or side walls of the grooves.

REFERENCES:
patent: 4533429 (1985-08-01), Josquin
patent: 4689871 (1987-09-01), Malhi
patent: 4926231 (1990-05-01), Hwank et al.
patent: 4947227 (1990-08-01), Teng
patent: 4975759 (1990-12-01), Sidner et al.
patent: 5013676 (1991-05-01), Horigome
patent: 5250461 (1993-10-01), Sparks

Affiliated with

Also associated with

Rating

Method for making a semiconductor device having an isolated laye does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Method for making a semiconductor device having an isolated laye, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method for making a semiconductor device having an isolated laye will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-581018