Method for making a semiconductor device having an anhydrous fer

Details Method for making a semiconductor device having an anhydrous fer Method for making a semiconductor device having an anhydrous fer

1993-08-19

1995-02-21

Bell, Janyce

Coating processes

Electrical product produced

Piezoelectric properties

4271262, 4271263, 427226, 427240, 4273722, 427377, 427384, 437231, B05D 512

Patent

active

053913930

ABSTRACT:
A method for making a semiconductor device having an anhydrous ferroelectric thin-film obtained from an anhydrous sol-gel solution. An anhydrous PZT sol-gel solution is provided, wherein the sol-gel solution is prepared from lead (II) acetate anhydrous, which is heated with zirconium and titanium precursors to form a gel. The sol-gel solution is prepared without hydrolyzing the solution to obtain precursor complexes which do not contain water. The sol-gel is then applied to a semiconductor substrate and crystallized to form a ferroelectric thin-film. In a preferred embodiment, one or more steps of preparing the sol-gel solution, applying the sol-gel solution, and crystallizing the sol-gel solution are carried out in the presence of an oxygen-containing ambient.

REFERENCES:
patent: 4946710 (1990-08-01), Miller et al.
patent: 4963390 (1990-10-01), Lipeles et al.
patent: 5160762 (1992-11-01), Brand et al.
S. D. Ramamurthi, et al., "Structural Investigations of Prehydrolyzed Precursors Used in the Sol-Gel Processing of Lead Titanate", J. Am. Ceram. Soc., 73 (8) pp. 2547-2551, (1990), (no month).
T. W. Dekleva, et al., "Sol-Gel Processing of Lead Titanate in 2-Methoxyethanol: Investigations into the Nature of the Prehydrolyzed Solutions", Comm. of Amer. Soc., J. Am. Ceram. Soc., 71 (5), pp. C-280-C282 (1988) (no month).

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