Method for making a semiconductor device having an anhydrous fer

Details Method for making a semiconductor device having an anhydrous fer Method for making a semiconductor device having an anhydrous fer

1992-04-06

1993-12-21

Bell, Janyce

Coating processes

Electrical product produced

Piezoelectric properties

4271262, 4271263, 4271264, 427226, 427240, 4273722, 427384, 437231, B05D 512

Patent

active

052719553

ABSTRACT:
A method for making a semiconductor device having an anhydrous ferroelectric thin film obtained from an anhydrous sol-gel solution. An anhydrous PZT sol-gel solution is prepared from Lead (II) Acetate Anhydrous which is thermally reacted with Zirconium and Titanium precursors to form a gel condensate. The sol-gel condensate is prepared without hydrolyzing the sol-gel solution to obtain precursor complexes which do not contain water. The formulation of the sol-gel exclusively by thermal condensation and in the absence of hydrolysis yields an anhydrous amorphous sol-gel having a uniform condensate composition. The anhydrous PZT thin film formed by the anhydrous sol-gel exhibits improved durability and substantially complete low-temperature conversion to the perovskite crystalline phase.

REFERENCES:
patent: 5160762 (1992-11-01), Brand et al.
GAF Corporation, Chemical Division (1972), M-PYROL.RTM., N-Methyl-2-Pyrrolidone, Handbook, pp. 38 and 52, (mo. & yr. unavailable).

Affiliated with

Also associated with

Rating

Method for making a semiconductor device having an anhydrous fer does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Method for making a semiconductor device having an anhydrous fer, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method for making a semiconductor device having an anhydrous fer will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-307608