Method for making a semiconductor device

Details Method for making a semiconductor device Method for making a semiconductor device

1995-03-10

1996-08-20

Breneman, R. Bruce

Fishing, trapping, and vermin destroying

437152, 437167, 437129, 437133, H01L 2122

Patent

active

055478999

ABSTRACT:
In a method of making a semiconductor device, a p-type compound semiconductor layer containing zinc as a dopant impurity and including at least one transition metal element selected from the group consisting of Fe, V, Cr, Mn, Co, and Ni is grown on a second semiconductor layer, the at least one transition metal element inhibiting zinc from diffusing into the second semiconductor layer. A method of making a semiconductor laser includes growing the p-type compound semiconductor layer containing zinc as a cladding layer and the second layer is an undoped compound semiconductor active layer.

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Kazmierski et al, "Universal Iron Behaviour In Zn--, Cd-- And Be--Doped P-Type InP", Journal of Crystal Growth, vol. 116, 1992, pp. 75-80.

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