Method for making a semiconductor device

Details Method for making a semiconductor device Method for making a semiconductor device

1988-06-08

1989-07-11

Hearn, Brian E.

Fishing, trapping, and vermin destroying

437162, 437167, 437168, 437165, H01L 2100, H01L 2102, H01L 2122, H01L 2118

Patent

active

048472174

ABSTRACT:
A method for producing a semiconductor device includes producing a first mask film on a main surface of a compound semiconductor wafer, patterning the first mask film and producing a second mask film so as to cover at least an end portion of the first mask film, diffusing impurities into the compound semiconductor wafer under gaseous pressure of atoms, which atoms occur in the compound of the semiconductor wafer, thereby to produce a first conductivity type first diffusion region, thermally diffusing impurities into the wafer under gaseous pressure of atoms, which atoms occur in the compound of the semiconductor wafer, thereby to produce a second conductivity type region. Accordingly, the end of the first mask film can be recognized accurately and used as a reference line for pattern alignment in photolithograph. Thus, diffusions of p type and n type impurities can be conducted at a high positional precision, and an outstanding performance semiconductor device can be obtained.

REFERENCES:
patent: 4378255 (1983-03-01), Holonyak, Jr. et al.
patent: 4511408 (1985-04-01), Holonyak, Jr.
patent: 4594603 (1986-06-01), Holonyak, Jr.
patent: 4639275 (1987-01-01), Holonyak, Jr.
patent: 4698122 (1987-10-01), Wada et al.
Omura, E., Selective Double Diffusion of Zn and Si into GaAs Using Sputtered Si Masks, Extended Abstracts of the 18th (1986 International) Conference on Solid State Devices and Materials, Tokyo, 1986, pp. 141-144.
Greiner, M., Diffusion of Silicon in Gallium Arsenide Using Rapid Thermal Processing: Experiment and Model, Appl. Phys. Lett., 44(8), Apr. 15, 1984.

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