Method for making a semiconductor device

Details Method for making a semiconductor device Method for making a semiconductor device

1982-09-30

1985-11-19

Ozaki, George T.

Metal working

Method of mechanical manufacture

Assembling or joining

29578, 148187, H01L 2122

Patent

active

045533148

ABSTRACT:
A method for making a semiconductor device is described in which overlapping polycrystalline silicon layers are deposited over selected portions of a semiconductor substrate and insulated from the substrate and from each other, thereby providing an improved semiconductor device for use in a random-access memory integrated circuit.

REFERENCES:
patent: 3892891 (1975-07-01), Goodman et al.
patent: 3898105 (1975-08-01), Mai et al.
patent: 3899363 (1975-08-01), Dennard et al.
patent: 3913211 (1975-10-01), Seeds et al.
patent: 3996658 (1976-12-01), Takei et al.
patent: 4179311 (1979-12-01), Athanas

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