Method for making a self-aligned oxide gate cap

Details Method for making a self-aligned oxide gate cap Method for making a self-aligned oxide gate cap

1994-07-29

1996-04-02

Fourson, George

Fishing, trapping, and vermin destroying

437235, 437238, 437228, 437 41, H01L 2144

Patent

active

055040390

ABSTRACT:
A method for making a self-aligned oxide gate cap is provided. The method requires only one photoresist step to make a self-aligned oxide cap that can serve as an implant block and provide self-aligned contacts. A substrate with a gate line is provided. A first oxide layer (36) is then isotropically deposited over the gate line. A portion of the first oxide layer (36) is then etched anisotropically. A second oxide layer (40) is then isotropically deposited over the gate line and the remaining first oxide layer (36). A spacer mask (43) is then formed over the gate line. If preferred, the spacer mask (43) could be extended beyond the spacer region to further separate the drain region from the gate line with dielectric creating a lightly doped drain region. The exposed oxide layer is etched anisotropically, resulting in a dual-step spacer (44) that can act as an implant mask for the source and drain regions and as a self aligned ohmic contact area. The gate metal is completely protected by this dual-step spacer (44).

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Kaanta et al., "Dual Damascene: A ULSI Wiring Technology" presented at VMIC Conference Jun. 11-12, 1991, IEEE, pp. 144-152.
O'Neill et al., "A Simplified Refractory Gate Process for High Performance GaAs RF FETs", Defensive Publication, Motorola, Inc. (1992).

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