Fishing – trapping – and vermin destroying
Patent
1991-02-14
1991-12-17
Chaudhuri, Olik
Fishing, trapping, and vermin destroying
148DIG10, 148DIG96, 148DIG150, 357 35, 437 32, H01L 21265, H01L 2186, H01L 2973
Patent
active
050735063
ABSTRACT:
A method for making a lateral bipolar transistor using SOI technology. A base mask is formed on the surface of a silicon island and its sidewalls coated with a layer of silicon dioxide. After local oxidization of the silicon island, emitter and collector regions are implanted using the base mask and the silicon dioxide deposited on the sidewalls of the base mask as a mask. The base mask is then removed and a shallow base contact region is implanted in the base region previously shielded by the base mask. The remaining silicon dioxide deposited on the sidewalls of the base mask form vertical spacers which are used as a self-aligned mask for forming silicide contacts on the emitter, collector and base contact regions. These remaining silicon dioxide vertical spacers physically separate emitter-base and base collector junctions from the highly doped base contact area and electrically isolate the silicide contacts.
REFERENCES:
patent: 4545113 (1985-10-01), Vora
patent: 4553316 (1985-11-01), Houston et al.
patent: 4792837 (1988-12-01), Zazzu
patent: 4965872 (1990-10-01), Vasudev
"High Performance Lateral Bipolar Transistor on Insulating Substrate", IBM Technical Disclosure Bulletin, Ning et al., vol. 26, No. 11, 4/1984.
Caviglia Anthony L.
Maszara Witold P.
Allied-Signal Inc.
Chaudhuri Olik
Malvone Christopher
Massung Howard G.
Pham Long
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