Method for making a sculptured diaphragm

Etching a substrate: processes – Masking of a substrate using material resistant to an etchant

Patent

Rate now

  [ 0.00 ] – not rated yet Voters 0   Comments 0

Details

216 2, 438759, 430319, 430320, B44C 122

Patent

active

058884122

ABSTRACT:
A sculptured diaphragm of a sensor is fabricated by providing a semiconductor material, forming at least one cavity on the front side of the semiconductor material, forming a diaphragm layer over the semiconductor material, and the etching a cavity on the back side of the semiconductor material. If a sensor having a diaphragm with a central boss is desired, then the diaphragm layer is planarized to form a thick and a thin portion in the diaphragm layer.

REFERENCES:
patent: 4133100 (1979-01-01), Myhre
patent: 4599792 (1986-07-01), Cade et al.
patent: 4994141 (1991-02-01), Harms et al.
patent: 5095401 (1992-03-01), Zavracky et al.
patent: 5354695 (1994-10-01), Leedy
patent: 5421956 (1995-06-01), Koga et al.
patent: 5445991 (1995-08-01), Lee
patent: 5500078 (1996-03-01), Lee
patent: 5549785 (1996-08-01), Sakai et al.
patent: 5585311 (1996-12-01), Ko
patent: 5595930 (1997-01-01), Baek
patent: 5616514 (1997-04-01), Muchow et al.
patent: 5632854 (1997-05-01), Mirza et al.

LandOfFree

Say what you really think

Search LandOfFree.com for the USA inventors and patents. Rate them and share your experience with other people.

Rating

Method for making a sculptured diaphragm does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Method for making a sculptured diaphragm, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method for making a sculptured diaphragm will most certainly appreciate the feedback.

Rate now

     

Profile ID: LFUS-PAI-O-1210931

  Search
All data on this website is collected from public sources. Our data reflects the most accurate information available at the time of publication.