Active solid-state devices (e.g. – transistors – solid-state diode – Non-single crystal – or recrystallized – semiconductor... – Schottky barrier to polycrystalline semiconductor material
Patent
1991-12-03
1996-12-10
Wojciechowicz, Edward
Active solid-state devices (e.g., transistors, solid-state diode
Non-single crystal, or recrystallized, semiconductor...
Schottky barrier to polycrystalline semiconductor material
257477, 257484, 257486, 257510, 257515, 257755, 257757, 257764, 257765, 257770, 257771, 437 39, 437 63, 437 78, 437175, 437178, 437189, 437197, 437200, 437203, 437228, H01L 2904, H01L 21265
Patent
active
055833489
ABSTRACT:
A method for making a schottky diode structure (10) simultaneously with a polysilicon contact structure (31,33) to a transistor is provided. In a single process step, a polysilicon layer is patterned to expose a single crystal semiconductor region (22a) over one portion of a substrate, while leaving portions the polysilicon layer (31, 33, 29) intact over other portions of the substrate (22b). Multi-layer metal electrodes are deposited and patterned to form a rectifying schottky contact to the exposed single crystal region (22a), and to form an ohmic contact to the exposed polysilicon (31, 33, 29).
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patent: 4278985 (1981-07-01), Stobbs
patent: 4860065 (1989-08-01), Koyama
patent: 4862244 (1989-08-01), Yamagishi
patent: 4956688 (1990-09-01), Honma et al.
patent: 5140383 (1992-08-01), Morris et al.
patent: 5144404 (1992-09-01), Iranmanesh et al.
Jackson Kevin B.
Motorola Inc.
Wojciechowicz Edward
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