Method for making a reliable ohmic contact between two layers of

Details Method for making a reliable ohmic contact between two layers of Method for making a reliable ohmic contact between two layers of

1983-09-12

1985-04-02

Hearn, Brian E.

Metal working

Method of mechanical manufacture

Electrical device making

29591, 357 67, 357 71, H01L 2190

Patent

active

045078521

ABSTRACT:
A method of fabricating a semiconductor integrated circuit by providing a semiconductor body having a major surface; depositing a first layer of a conductive material on the major surface of the semiconductor body, and depositing a layer of a refractory silicide on the first layer of conductive material. Portions of said refractory silicide layer are marked to define a first pattern thereon; and the silicide layer is etched down to the first conductive layer in order to produce the pattern defined by the masking step. Portions of the body are masked again to define a second pattern thereon; etching said first conductive layer in said second masking pattern. The semiconductor body is sintered to stabilize the contact between first conductive layer and layer of refractory silicide. A layer of dielectric material is deposited on body. Portions of said dielectric material are masked to define a third pattern thereon; and the dielectric material is etched to silicide layer in accordance with the third pattern. A second layer of conductive material is deposited on body; and the body is sintered again in order to stabilize the contact between the second conductive layer and the silicide layer.

REFERENCES:
patent: 3777364 (1973-12-01), Schinella et al.
patent: 4102733 (1978-07-01), De La Moneda et al.
patent: 4164461 (1979-08-01), Schilling
patent: 4228212 (1980-10-01), Brown et al.

Affiliated with

Also associated with

Rating

Method for making a reliable ohmic contact between two layers of does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Method for making a reliable ohmic contact between two layers of, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method for making a reliable ohmic contact between two layers of will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-1084802