Semiconductor device manufacturing: process – Making device or circuit emissive of nonelectrical signal – Including integrally formed optical element
Reexamination Certificate
2005-09-13
2005-09-13
Gurley, Lynne A. (Department: 2812)
Semiconductor device manufacturing: process
Making device or circuit emissive of nonelectrical signal
Including integrally formed optical element
C438S030000, C438S069000, C438S071000, C438S072000
Reexamination Certificate
active
06943049
ABSTRACT:
The present invention provides a method of manufacturing an active matrix reflecting liquid crystal display device including the step of forming and processing an interlayer insulating film. The step forming and processing an interlayer insulating film includes step A of forming the interlayer insulating film on a silicon film in which the sources and drains of TFTs are formed; step B of forming a photoresist layer on the interlayer insulating film; step C of patterning the photoresist layer in a specified pattern by using, as a photoresist mask for the photoresist layer, a mask having a pattern formed with a resolution limit or less corresponding to the reflecting electrode to be formed; and step D of etching the interlayer insulating film by using the photoresist layer patterned in step C as an etching mask. After step D, a metal film is deposited for simultaneously forming source electrodes, signal wiring, drain electrodes, and the reflecting electrode. The manufacturing method can thus be simplified to improve productivity.
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Gurley Lynne A.
Isaac Stanetta
Sonnenschein Nath & Rosenthal LLP
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