Fishing – trapping – and vermin destroying
Patent
1991-09-17
1993-06-29
Chaudhuri, Olik
Fishing, trapping, and vermin destroying
437 62, 437228, 437233, 437901, H01L 21205
Patent
active
052234444
ABSTRACT:
The method of making a pressure sensor formed of semiconductor material on an insulating support, i.e., as a semiconductor-on-silicon, is described. The sensor is comprised of four piezoresistive gauges formed in the semiconductor material. Two of the gauges, each have a pair of limbs joined by a base, such that they are U-shaped, and two others are I-shaped. Each of the four gauges comprise two half-gauges, and each half-gauge comprises an elongated sensing zone in semiconductor material and having a reduced width in the plane of the insulating support. Two ohmic contact zones are disposed at the ends of each of the half-gauges, and two connection zones in semiconductor material and of greater width are disposed between the sensing zones and the ohmic contact zones, the form of the two connection zones are the same for each of the eight half-gauges.
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International conference of solid state sensors and actuators, Digest of Technical Papers, 1985, pp. 430-433, New York, U.S.
Goss Joseph
Leydier Robert
Mosser Vincent
Suski Ian
Chaudhuri Olik
Ojan Ourmazd S.
Societe d'Applications Generales
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