Fishing – trapping – and vermin destroying
Patent
1991-10-07
1993-09-28
Hearn, Brian E.
Fishing, trapping, and vermin destroying
437 46, 437149, 148DIG13, H01L 21266
Patent
active
052486230
ABSTRACT:
A diode which includes a first region formed in a polycrystalline silicon layer formed on a substrate. The diode has a predetermined width W and is one of an intrinsic region and a region including impurities at a low concentration therein, a second region and a third region including P-type impurities and N-type impurities therein respectively and both being oppositely arranged from each other with the first region therebetween in the polycrystalline silicon layer. Electrodes are electrically connected to the second region and the third region respectively, and further the film characteristic of the polycrystalline silicon layer and the predetermined width W thereof are determined in such a manner as to fulfill the following equation:
REFERENCES:
patent: 4002501 (1977-01-01), Tamura
patent: 4406709 (1983-09-01), Celler et al.
patent: 4458261 (1984-07-01), Omura
patent: 4492974 (1985-01-01), Yoshida et al.
patent: 4560419 (1985-12-01), Bourassa et al.
patent: 4616404 (1986-10-01), Wang et al.
patent: 4753896 (1988-06-01), Matloubian
Gerzberg et al., IEEE Electron Device Letters, "A Quantitative Model of the Effect of Grain Size on the Resistivity of Polycrystalline Silicon Resistors", Mar. 1980, vol. EDL-1, No. 3.
Muto Hiroshi
Yamaoka Masami
Chaudhari C.
Hearn Brian E.
Nippondenso Co. Ltd.
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