Method for making a passive device structure

Metal working – Electric condenser making

Reexamination Certificate

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C029S025420, C029S592100, C427S079000

Reexamination Certificate

active

10971829

ABSTRACT:
A method including forming a ceramic material directly on a sheet of a first conductive material; forming a second conductive material on the ceramic material; and sintering the ceramic material. A method including forming a ceramic material directly on a sheet of a first conductive material; forming a second conductive material on the ceramic material so that the ceramic material is disposed between the first conductive material and the second conductive material; thermal processing at a temperature sufficient to sinter the ceramic material and form a film of the second conductive material; and coating an exposed surface of at least one of the first conduct material and the second conductive material with a different conductive material. An apparatus including first and second electrodes; and a ceramic material between the first electrode and the second electrode, wherein the ceramic material is sintered directly on one of the first and second electrode.

REFERENCES:
patent: 4528613 (1985-07-01), Stetson et al.
patent: 4687540 (1987-08-01), Singhdeo et al.
patent: 5155655 (1992-10-01), Howard et al.
patent: 5172304 (1992-12-01), Ozawa et al.
patent: 5206788 (1993-04-01), Larson et al.
patent: 5800575 (1998-09-01), Lucas
patent: 5889647 (1999-03-01), Hansen et al.
patent: 5978207 (1999-11-01), Anderson et al.
patent: 6043973 (2000-03-01), Nagashima et al.
patent: 6226172 (2001-05-01), Sato et al.
patent: 6433993 (2002-08-01), Hunt et al.
patent: 6437970 (2002-08-01), Lee et al.
patent: 6477034 (2002-11-01), Chakravorty et al.
patent: 6524352 (2003-02-01), Adae-Amoakoh et al.
patent: 6541137 (2003-04-01), Kingon et al.
patent: 6631551 (2003-10-01), Bowles et al.
patent: 6638378 (2003-10-01), O'Bryan et al.
patent: 6775150 (2004-08-01), Chakravorty et al.
patent: 6795296 (2004-09-01), Palanduz et al.
patent: 6980416 (2005-12-01), Sakaguchi et al.
patent: 7072167 (2006-07-01), Borland
patent: 2001/0019144 (2001-09-01), Roy
patent: 2001/0054748 (2001-12-01), Wikborg et al.
patent: 2003/0136997 (2003-07-01), Shioga et al.
patent: 2003/0184953 (2003-10-01), Lee et al.
patent: 2004/0126484 (2004-07-01), Croswell et al.
patent: 2005/0011857 (2005-01-01), Borland et al.
patent: 2005/0118482 (2005-06-01), Sriramulu et al.
patent: 0977218 (2000-02-01), None
patent: 02-005507 (1990-01-01), None
patent: 07122456 (1995-12-01), None
patent: 2002-297939 (2001-10-01), None
Ohly, C. et al., “Defects in alkaline earth titanate thin films—the conduction behavior of doped BST,” Integrated Ferroelectrics, 2001, vol. 38, pp. 229-237.
Ohly, C. et al., “High temperature conductivity behavior of doped SrTiO3 thin films,” Integrated Ferroelectrics, 2001, vol. 33, pp. 363-372.
Ohly, C. et al., “Electrical conductivity and segregation effects of doped SrTiO3 thin films,” Journal of European Ceramic Society, 21 (2001) 1673-1676.
Felten, J, et al.: Embedded Ceramic Resistors and Capacitors in PWB: Process and Performance, http://edc.ncms.org/ (2004) 7 pages.
Offerman, SE, et al.: “Grain Nucleation and Growth During Phase Transformations,” Science (2002) 298:1003-1005.
PCT Search Report and Written Opinion for PCT Appln. No. PCT/US2005/037626, mailed May 8, 2006 (9 pages).
Office Action for U.S. Appl. No. 11/172,544, mailed Dec. 15, 2006 (12 pages).
Office Action for U.S. Appl. No. 10/974,139, mailed Dec. 13, 2006 (11 pages).

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