Method for making a multiple-wavelength opto-electronic...

Details Method for making a multiple-wavelength opto-electronic... Method for making a multiple-wavelength opto-electronic...

2011-01-04

2011-01-04

Cao, Phat X (Department: 2813)

Semiconductor device manufacturing: process

Making device or circuit emissive of nonelectrical signal

Making emissive array

C438S029000, C257SE33001

Reexamination Certificate

active

07863066

ABSTRACT:
A method for making a multiple-wavelength opto-electronic device which may include providing a substrates and forming a plurality of active optical devices to be carried by the substrate and operating at different respective wavelengths. Moreover, each optical device may include a superlattice comprising a plurality of stacked groups of layers, and each group of layers may include a plurality of stacked semiconductor monolayers defining a base semiconductor portion and at least one non-semiconductor monolayer thereon.

REFERENCES:
patent: 4205331 (1980-05-01), Esaki et al.
patent: 4370510 (1983-01-01), Stirn
patent: 4485128 (1984-11-01), Dalal et al.
patent: 4594603 (1986-06-01), Holonyak, Jr.
patent: 4598164 (1986-07-01), Tiedge et al.
patent: 4882609 (1989-11-01), Schubert et al.
patent: 4908678 (1990-03-01), Yamazaki
patent: 4937204 (1990-06-01), Ishibashi et al.
patent: 4969031 (1990-11-01), Kobayashi et al.
patent: 5055887 (1991-10-01), Yamazaki
patent: 5081513 (1992-01-01), Jackson et al.
patent: 5216262 (1993-06-01), Tsu
patent: 5357119 (1994-10-01), Wang et al.
patent: 5577061 (1996-11-01), Hasenberg et al.
patent: 5594567 (1997-01-01), Akiyama et al.
patent: 5606177 (1997-02-01), Wallace et al.
patent: 5616515 (1997-04-01), Okuno
patent: 5627386 (1997-05-01), Harvey et al.
patent: 5683934 (1997-11-01), Candelaria
patent: 5684817 (1997-11-01), Houdre et al.
patent: 5994164 (1999-11-01), Fonash et al.
patent: 6058127 (2000-05-01), Joannopoulos et al.
patent: 6255150 (2001-07-01), Wilk et al.
patent: 6274007 (2001-08-01), Smirnov et al.
patent: 6281518 (2001-08-01), Sato
patent: 6281532 (2001-08-01), Doyle et al.
patent: 6326311 (2001-12-01), Ueda et al.
patent: 6344271 (2002-02-01), Yadav et al.
patent: 6350993 (2002-02-01), Chu et al.
patent: 6376337 (2002-04-01), Wang et al.
patent: 6436784 (2002-08-01), Allam
patent: 6472685 (2002-10-01), Takagi
patent: 6498359 (2002-12-01), Schmidt et al.
patent: 6501092 (2002-12-01), Nikonov et al.
patent: 6521549 (2003-02-01), Kamath et al.
patent: 6566679 (2003-05-01), Nikonov et al.
patent: 6607980 (2003-08-01), Uchiyama et al.
patent: 6608327 (2003-08-01), Davis et al.
patent: 6621097 (2003-09-01), Nikonov et al.
patent: 6638838 (2003-10-01), Eisenbeiser et al.
patent: 6646293 (2003-11-01), Emrick et al.
patent: 6673646 (2004-01-01), Droopad
patent: 6690699 (2004-02-01), Capasso et al.
patent: 6711191 (2004-03-01), Kozaki et al.
patent: 6748002 (2004-06-01), Shveykin
patent: 6816530 (2004-11-01), Capasso et al.
patent: 6891869 (2005-05-01), Augusto
patent: 7625767 (2009-12-01), Huang et al.
patent: 2002/0094003 (2002-07-01), Bour et al.
patent: 2003/0034529 (2003-02-01), Fitzgerald et al.
patent: 2003/0057416 (2003-03-01), Currie et al.
patent: 2003/0089899 (2003-05-01), Lieber et al.
patent: 2003/0162335 (2003-08-01), Yuki et al.
patent: 2003/0215990 (2003-11-01), Fitzgerald et al.
patent: 2004/0084781 (2004-05-01), Ahn et al.
patent: 2004/0227165 (2004-11-01), Wang et al.
patent: 2005/0029511 (2005-02-01), Mears et al.
patent: 2005/0031247 (2005-02-01), Mears et al.
patent: 2007/0151595 (2007-07-01), Chiou et al.
patent: 2007/0190670 (2007-08-01), Forest
patent: 2007/0262295 (2007-11-01), Enicks
patent: 2008/0012004 (2008-01-01), Huang et al.
patent: 2009/0165839 (2009-07-01), Zeman et al.
patent: 0 843 361 (1996-05-01), None
patent: 2347520 (2000-09-01), None
patent: 61027681 (1986-02-01), None
patent: 61145820 (1986-07-01), None
patent: 61220339 (1986-09-01), None
patent: 62219665 (1987-09-01), None
patent: 99/63580 (1999-12-01), None
patent: 02/103767 (2002-12-01), None
Luo et al.,Chemical Design of Direct-Gap Light-Emitting Silicon, published Jul. 25, 2002, The American Physical Society; vol. 89, No. 7.
Tsu,Phenomena in Silicon Nanostructure Devices, University of North Carolina at Charlotte, Sep. 6, 2000.
Ye et al.,GaAs MOSFET with Oxide Gate Dielectric Grown by Atomic Layer Deposition, Agere Systems, Mar. 2003.
Novikov et al.,Silicon-based Optoelectronics, 1999-2003, pp. 1-6.
Fan et al.,N- and P-Type SiGe/Si Superlattice Coolers, the Seventeenth Intersociety Conference on Thermomechanical Phenomena in Electronic Systems (ITherm 2000), vol. 1, pp. 304-307, Las Vegas, NV, May 2000.
Shah et al.,Experimental Analysis and Theoretical Model for Anomalously High Ideality Factors(n>2.0)in AIGaN/GaN P-N Junction Diodes, Journal of Applied Physics, vol. 94, No. 4, Aug. 15, 2003.
Ball,Striped Nanowires Shrink Electronics, news@nature.com, Feb. 7, 2002.
Fiory et al.,Light Emission from Silicon: Some Perspectives and Applications, Journal of Electronic Materials, vol. 32, No, 10, 2003.
Lecture 6:Light Emitting and Detecting Devices, MSE 6001, Semiconductor Materials Lectures, Fall 2004.
Harvard University Professor and Nanosys Co-Founder, Charlie Lieber, Raises the Stakes in the Development of Nanoscale Superlattice Structures and Nanodevices, Feb. 8, 2002, Nanosys, Inc.
Burgess,Electronics Integrated with Photonics in 3-D on Silicon Chip, Photonics Spectra, Jan. 2006.
Enicks et al. “Thermal Redistribution of Oxygen and Carbon in Boron-Doped Pseudomorphic SiGeC Heterojunction Nanometer Base Layers” Journal of The Electrochemical Society; 153 (6) G529-G533 (2006).
Enicks et al. “A Study of Process-Induced Oxygen Updiffusion in Pseudomorphic Boron-Doped Sub-50nm SiGeC Layers Grown by LPCVD” Electrochemical and Solid-State Letters, 8 (10) G286-G289 (2005).
Enicks et al. “Thermal Redistribution of Oxygen and Carbon IN Sub-50NM Strained Layers of Boron Doped SiGeC” ECS Transactions, 3 (7) 1087-1098 (2006).

Affiliated with

Also associated with

Rating

Method for making a multiple-wavelength opto-electronic... does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Method for making a multiple-wavelength opto-electronic..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method for making a multiple-wavelength opto-electronic... will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-2642890