Method for making a multi-point emission type semiconductor lase

Details Method for making a multi-point emission type semiconductor lase Method for making a multi-point emission type semiconductor lase

1990-03-08

1991-09-10

Chaudhuri, Olik

Fishing, trapping, and vermin destroying

148DIG95, 156644, 437 67, 437133, 437 48, 437226, 437974, H01L 2120, H01L 21265

Patent

active

050473646

ABSTRACT:
A multi-point light emission type semiconductor laser device including a plurality of light emission points which are produced on a p type or n type semiconductor layer monolithically and are capable of being driven independently includes electrically insulating or semi-insulating semiconductor regions provided at intermediate portions of light emission points in the p type or n type semiconductor layer. A separation groove is further produced up to reaching the insulating or semi-insulating regions from the side opposite to the semiconductor layer. Thus, respective light emission points are perfectly electrically separated each other by this separation groove and the region.

REFERENCES:
patent: 3930912 (1976-01-01), Wisbey
patent: 3968564 (1976-07-01), Springthorpe
patent: 4069463 (1978-01-01), McGroddy et al.
patent: 4182025 (1980-01-01), Wickenden
patent: 4531217 (1985-07-01), Kitamura
patent: 4547956 (1985-10-01), Bouadma et al.
patent: 4879250 (1989-11-01), Chan
Uchida et al., "Integrated AlGaAs Two-Beam LD-PD Array . . .", Electron. Lett., vol. 22, No. 11, 22nd May 1986, pp. 585-587.
Kume et al., "A New Monolithic . . . Disk Applications", IEEE Journal of Quantum Electronics, vol. QE-23, No. 6, Jun. 1987 pp. 898-901.

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