Semiconductor device manufacturing: process – Chemical etching – Vapor phase etching
Reexamination Certificate
1999-11-30
2001-08-07
Utech, Benjamin L. (Department: 1765)
Semiconductor device manufacturing: process
Chemical etching
Vapor phase etching
C438S719000, C438S723000
Reexamination Certificate
active
06271145
ABSTRACT:
This application claims the priority of Japanese Application No. P11-151872 filed on May 31, 1999.
FIELD OF THE INVENTION
The present invention relates to a method for making a micromachine or spherical sensor type measuring apparatus consisting of a microspherical sensor portion and a surrounding portion or surrounding electrodes which surrounds the sensor portion, particularly, a method for making a microspherical body having a diameter of less than several mm meters and micro electrodes.
BACKGROUND OF THE INVENTION
Methods and means have been known for detecting external force, acceleration or the like by electrostatically or magnetically floating up a microspherical body in no contact with the surrounding to detect the displacement of the spherical body. Typically, such means has a microspherical body, an apparatus for generating electric or magnetic field to float up the microspherical body and a pick-up for detecting the displacement of the spherical body. In some cases, the floated microspherical body may be rotated at a high speed.
The apparatus for generating electric or magnetic field and the pick-up for detecting the displacement of the microspherical body have, typically, a plurality of electrodes, which are disposed in close vicinity to the microspherical body.
Conventionally, the microspherical body and the surrounding electrodes have been separately made and assembled. Therefore, no appropriate method for making a microspherical body and surrounding electrodes concurrently and precisely to arrange the two in close vicinity with each other has been known.
In the field of semiconductor device production, many methods and techniques are known for making micro chips and forming microscopic circuit patterns in multi-layers. These methods include, for example, lithography, etching, chemical vapor deposition (CVD), electron beam exposure printing or the like. However, these methods can make plane boards or chips, but cannot make a microspherical body and micro electrodes which are disposed in close vicinity to the microspherical body.
Accordingly, it is an object of the present invention to provide a method for making a microspherical body and micro electrodes which are disposed in close vicinity to the microspherical body precisely and easily.
It is another object of the present invention to provide a method for making a microspherical body and a microspherical shell which surrounds the microspherical body and for forming electrodes on the inner surface of the microspherical shell.
SUMMARY OF THE INVENTION
According to the present invention, there is provided a method for making a micromachine, which includes a spherical body and a spherical shell surrounding said spherical body, comprising; forming a victim layer on said spherical body to coat said spherical body, forming a function layer on said victim layer, said function layer including at least one conductive material pattern and/or insulating material layer, forming a structure layer of insulating material to coat said spherical body on which said function layer is formed, forming etching bores extending from the outer surface of said structure layer to said victim layer, introducing gaseous etchant into said etching bores to remove said victim layer.
Accordingly, a spherical body and a shell surrounding the spherical body can be made at the same time and precisely. Particularly, a microspherical body and a micro shell can be made at the same time and precisely.
Further according to the present invention, said process for forming a function layer comprising; forming conductive material patterns on said victim layer, forming an insulating material layer to coat said conductive material patterns, forming grooves on said insulating material layer to expose said conductive material patterns, forming circuit patterns on said insulating material layer to connect with said conductive material patterns exposed from said insulating material layer.
The method further comprising; forming bores on said structure layer to expose said circuit patterns, forming bumps to connect with said circuit patterns exposed from said structure layer.
Accordingly, a spherical body and electrodes which are positioned in close vicinity to the spherical body can be made at the same time and precisely. Particularly, a microspherical body and micro electrodes can be made at the same time and precisely.
Said etching bores are formed by making bores on the same points in said process for forming a function layer and said process for forming a structure layer. Said etching bores are made after said process for forming a structure layer.
According to the present invention, said victim layer is made of silicon, and said etchant is xenon difluoride. Said structure layer is formed by thermal hardening a thermosetting resin. Said insulating material layer is made of silicon dioxide derived from TEOS.
According to the present invention, there is provided a method for making a spherical body type sensor apparatus, which includes a spherical body and a spherical shell surrounding said spherical body comprising;
forming a victim layer on a spherical body to coat said spherical body,
forming electrode patterns of a conductive material on said victim layer,
forming an insulating material layer to coat said electrode patterns,
forming bores on said insulating material layer to expose said electrode patterns,
forming circuit patterns on said insulating material layer to connect with said electrode patterns exposed from said insulating material layer,
forming an insulating structure layer to coat said spherical body on which said circuit patterns have been formed,
forming a plurality of etching bores extending from the outer surface of said structure layer to said victim layer,
introducing gaseous etchant into said etching bores to remove said victim layer.
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Ball Semiconductor Inc.
Deo Duy-Vu
Haynes and Boone LLP
Utech Benjamin L.
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