Semiconductor device manufacturing: process – Chemical etching – Vapor phase etching
Reexamination Certificate
2005-04-19
2005-04-19
Zarabian, Amir (Department: 2822)
Semiconductor device manufacturing: process
Chemical etching
Vapor phase etching
C438S689000, C438S694000, C438S708000, C438S778000
Reexamination Certificate
active
06881677
ABSTRACT:
A method for forming a fluid feed via in a semiconductor substrate chip for a micro-fluid ejection head. The method includes applying a photoresist planarization and protection layer to a first surface of the chip. The photoresist planarization and protection layer is patterned and developed to define at least one fluid feed via location. A strippable layer is applied to the photoresist planarization and protection layer on the chip. The strippable layer is patterned and developed with a photomask to define the at least one fluid feed via location in the strippable layer. The chip is then dry etched to form at least one fluid feed via in the defined feed via location. Before or after etching the chip, deprotection of the strippable layer is induced so that the strippable layer can be substantially removed with a solvent without substantially affecting the photoresist planarization and protection layer.
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Patil Girish Shivaji
Vaideeswaran Karthik
Lexmark International Inc.
Luedeka Neely & Graham P.C.
Tran Thanh Y.
Zarabian Amir
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